lds - 0192 - 2, rev . 1 (111618) ?2011 microsemi corporation page 1 of 6 2n3418u4 thru 2n3421u4 available on commercial versions npn med iu m power silicon transistor qualified per mil -prf- 19500/393 qualified levels : jan, jantx and jantxv description this family of high - fr equency, epitaxial planar transistors feature low saturation voltage. the u4 package is hermetically sealed and provides a low profile for minimizing board height. these devices are also available in to - 5 and to - 39 packages. microsemi also offers numerou s other transistor products to meet higher and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. u4 package also available in : to - 5 package (leaded) 2n3418 C 2n3421 to - 39 package (short leaded) 2n3418s C 2n3421s important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n3418u4 through 2n3421u4 series. ? rohs compliant versions available (commercial grade only). ? vce(sat) = 0.25 v @ ic = 1 a. ? rise time t r = 0.22 s m ax @ i c = 1.0 a, i b1 = 100 ma . ? fall time t f = 0.20 s m ax @ i c = 1.0 a, i b2 = - 100 ma . applications / benefits ? general purpose transistors for medium power applications requiring high frequency switching and low package profile. ? military and other high - reliability applications. m axim um ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test con ditions symbol 2n3418 u4 2n3420 u4 2n3419 u4 2n3421 u4 unit collector - emitter voltage v ceo 60 80 v collector - base voltage v cbo 85 125 v emitter - base voltage v ebo 8 v collector current i c 3 5 a total power dissipation @ t a = +25c (1) @ t c = +100c (2) p d 1 15 w operating & storage junction temperature range t j , t stg - 65 to +200 c notes : 1. derate linearly 5.72 mw/c for t a > +25 c. 2. derate linearly 150 mw/c for t c > +100 c. downloaded from: http:///
lds - 0192 - 2, rev . 1 (111618) ?2011 microsemi corporation page 2 of 6 2n3418u4 thru 2n3421u4 mechanical and packaging ? case: hermetically sealed, aluminum nit ride (aln) ceramic body with gold over nickel plated kovar lid. ? terminals: gold over nickel plated surface mount terminations . ? marking: part number, d ate c ode, m anufacturers id . ? polarity: see package dimensions . ? tape & reel option: standard per eia - 481d . consult factory for quantities. ? w eight: .125 grams (125 milligrams). ? see p ackage d imensions on last page. part nomenclature jan 2n3418 u4 (e3) reliability level jan = jan level jantx = jantx level jant xv = jantxv level blank = co mmercial jedec type number (see electrical characteristics table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant surface mount package type symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance . i ceo c ollector cutoff current, base open . i cex c ollector cutoff current, circuit between base and emitter . i ebo e mitter cutoff current, collector open . h fe c ommon - emitter static forward current transfer ratio . t a a mbient temperature, free - air temperature . v ceo c ollector - emitter voltage, base open . v cbo c ollector - emitter voltage, emitter open . v ebo e mitter - base voltage, collector open . downloaded from: http:///
lds - 0192 - 2, rev . 1 (111618) ?2011 microsemi corporation page 3 of 6 2n3418u4 thru 2n3421u4 e lectrical characteristics @ t a = +25c, unless otherwise noted . off character is tics parameters / test conditions symbol min. max. unit collector - emitter breakdown current v (br)ceo v i c = 50 ma, i b = 0 2n3418 u4 , 2N3420U4 2n3419 u4 , 2n3421u4 60 80 collector - emitter cutoff current i cex 0.3 0.3 a v be = - 0.5 v, v ce = 80 v v be = - 0.5 v, v ce = 120 v 2n3418 u4 , 2N3420U4 2n3419 u4 , 2n3421u4 collector - base cutoff current v ce = 45 v, i b = 0 v ce = 60 v, i b = 0 2n3418 u4 , 2N3420U4 2n3419 u4 , 2n3421u4 i ceo 5.0 5.0 a emitter - base cutoff current v eb = 6.0 v, i c = 0 v eb = 8.0 v, i c = 0 i ebo 0.5 10 a on character is tics (1) parameters / test conditions symbol min. max. unit forward - current transfer ratio h fe i c = 100 ma, v ce = 2.0 v 2n3418 u4 , 2 n34 19 u4 2n3420 u4 , 2n3421u4 20 40 i c = 1.0 a, v ce = 2.0 v 2n3418 u4 , 2n3419 u4 2n3420 u4 , 2n3421u4 20 40 60 120 i c = 2.0 a, v ce = 2.0 v 2n3418 u4 , 2n3419 u4 2n3420 u4 , 2n3421u4 15 30 i c = 5.0 a, v ce = 5.0 v 2n3418 u4 , 2n3419 u4 2n3420 u4 , 2n3421u4 10 15 collector - emitter saturation voltage v ce(sat) v i c = 1.0 a, i b = 0.1 a i c = 2.0 a, i b = 0.2 a 0.25 0.5 base - emitter saturation voltage i c = 1.0 a, i b = 0.1 a i c = 2.0 a, i b = 0.2 a v be(sat) 0.6 0.7 1.2 1.4 v dynamic characteristics parameter s / test conditions symbol min. max. unit magnitude of common emitter small - signal short circuit forward current transfer ratio |h fe | 1.3 0.8 i c = 0.1 a, v ce = 10 v, f = 20 mhz output capacitance c obo 150 pf v cb = 10 v, i e = 0, 100 khz f 1.0 mhz (1 ) pulse test: pulse width = 300 s, d uty c ycle 2.0% . downloaded from: http:///
lds - 0192 - 2, rev . 1 (111618) ?2011 microsemi corporation page 4 of 6 2n3418u4 thru 2n3421u4 electrical characteristics @ t a = +25c, unless otherwise noted . ( continued ) switching characteristics parameters / test conditions (for all) symbol min. max. unit delay time rise time i c = 1.0 a, i b1 = 100 ma t d t r 0.08 0.22 storage time fall time i b2 = - 100 ma v be(off) = - 3.7 v t s t f 1.10 0.20 s turn - off time r l = 20 ? t off 1.20 safe operating area (see graph below and reference mil - std - 750, method 3053 ) dc test t c = + 100 c, 1 cycle, t > 1 s test 1 v ce = 5.0 v, i c = 3.0 a test 2 v ce = 37 v, i c = 0.4 a test 3 v ce = 60 v, i c = 0.185 a v ce = 80 v, i c = 0.12 a 2n3418 u4 , 2N3420U4 2n3419 u4 , 2n3421u4 clamped switching t a = + 25c, i b = 0.5 a, i c = 3.0 a collector to emitter voltage v ce (volts) maximum safe operating area (continuous dc) collec tor current i c (amperes) downloaded from: http:///
lds - 0192 - 2, rev . 1 (111618) ?2011 microsemi corporation page 5 of 6 2n3418u4 thru 2n3421u4 graphs t c ( o c ) (c ase ) figure 1 temperature - power derating curve notes: thermal resistance junction to case = 4.5 o c/w max fi nis h - alloy temp = 175 o c time (s) figure 2 maximum thermal impedance note: t c = +25 c, thermal resistance r jc = 4.5 c/w dc o peration m aximum rating (w) theta ( o c /w) downloaded from: http:///
lds - 0192 - 2, rev . 1 (111618) ?2011 microsemi corporation page 6 of 6 2n3418u4 thru 2n3421u4 package dimensions notes: 1. dimensions are in inches. 2. mil limeter equivalents are given for general information only. 3. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions ltr inches millimeters min max min max bl 0 .215 0 .225 5.46 5.72 bw 0 .145 0 .155 3.68 3.94 ch 0 .049 0 .075 1.24 1.91 lh 0.020 0.51 lw1 0 .135 0 .145 3.43 3.68 lw2 0 .047 0 .057 1.19 1.45 ll1 0 .085 0 .125 2.16 3.1 7 ll2 0 .045 0.075 1.14 1.91 ls1 0 .070 0 .095 1.78 2.41 ls2 0 .035 0 .048 0.89 1.21 q1 0.030 0 .070 0.76 1.78 q2 0 .02 0 0 .035 0.51 0.89 terminal 1 collector 2 base 3 emitter downloaded from: http:///
|
